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Self-consistent ICP with Bias

December 12th, 2017 icp-plasma-simulation-bias

This VizGlow example describes a self-consistent plasma simulation of an inductively coupled plasma (ICP) with a bias voltage. Typically, a quasi-neutral formulation is preferable over self-consistent for high density plasma discharges where Debye lengths become very small relative to geometric dimensions in the discharge. Sheath thickness become negligible compared to the physical system and can be ignored. This is common in ICP and microwave plasmas and under these conditions a quasi-neutral approximation may be made. […]


Inductively Coupled Plasma Reactor with Large Gas Chemistries

November 27th, 2017 icp-plasma-simulation-vizglow

Plasma processing reactors are used to accomplish a variety of unit steps in a semiconductor integrated circuit manufacture. In most cases, complex feed gas mixtures are used in a plasma reactor to realize precise etch, deposition, doping, cleaning and other types of processes.  The VizGlow Plasma Modeling Software Package provide capability for modeling plasma reactors with complex reactive plasma chemistries in the gas phase and at reactive surfaces.  This technical note discusses the simulation of […]


Microwave Reactor in the Frequency Domain

May 1st, 2017 3D Microwave Plasma MWP Simulation in VizGlow

This example application simulates a steady microwave field in a three-dimensional plasma reactor using in semiconductor materials processing.  The Frequency-Domain Electromagnetic Wave Solver Module of the VizEM is used for this problem. The geometry for the simulation is shown in Figure 1 and comprises a cylindrical processing reactor with an air-filled waveguide port in the top center of the reactor.  The waveguide is rectangular in cross section and comprises an L-bend with a 45o mirror surface […]


CCP Reactor for Semiconductor Materials Processing

May 1st, 2017 ccp-plasma-simulation-vizglow

Capacitively Coupled Plasma (CCP) discharges in parallel-plate configuration are commonly used in semiconductor and other materials processing applications.  These discharges provide a compact platform in which a plasma can be generated to process a flat wafer surface.  The highly directional ion impact at the wafer surface with high ion impact energies is beneficial to a number of wafer processes; in particular for etch processes.  This application note discusses the simulation of a typical CCP reactor […]