Fluid vs Hybrid Plasma Formulations for IEADFs in Semiconductor Reactors

February 20th, 2018 Capacitively Coupled Plasma Simulation in VizGlow

Ion energy and angular distribution functions (IEADFs) characterize the anisotropic impact behavior of ions onto wafer surfaces in cold plasma reactive ion etchers (RIE). IEADFs can be used to quantify the etching performance and guide reactor design in the semiconductor fabrication process. Reducing the angles of ion impact at the wafer surface sharpens the resolution of the etching process, enabling the production of smaller etched features. Controlling the ion energy distributions also offers control over […]

Ion Momentum and Drift Diffusion Approximation in VizGlow

February 7th, 2018

When setting up a new non-equilibrium plasma simulation in VizGlow, the user must select an ion momentum model. Two available options in VizGlow are “Solve ion momentum equation” and “Use drift-diffusion approximation.” This discussion is intended to help a new user understand the differences between these options and to determine which selection is appropriate for their problem. The drift-diffusion relationships are derived from the species momentum equations and characterizes the spatial transport of particles. Drift […]

Plasma Simulations Strategies for Semiconductor Applications

January 3rd, 2018 VizGlow-plasma-simulation

The semiconductor industry is one of the most competitive global markets experiencing consistent month-to-month growth with annual global sales approaching $400B. There is a strong demand for integrated circuit technologies across growing markets, such as mobile devices and automotive electronics, with fierce international competition. This is driving an innovation race for enhanced process technologies, increased automation, and reduced product development timelines, in light of increasing development and fabrication costs. A new integrated circuit design can […]

Self-consistent ICP with Bias

December 12th, 2017 icp-plasma-simulation-bias

This VizGlow example describes a self-consistent plasma simulation of an inductively coupled plasma (ICP) with a bias voltage. Typically, a quasi-neutral formulation is preferable over self-consistent for high density plasma discharges where Debye lengths become very small relative to geometric dimensions in the discharge. Sheath thickness become negligible compared to the physical system and can be ignored. This is common in ICP and microwave plasmas and under these conditions a quasi-neutral approximation may be made. […]

Inductively Coupled Plasma Reactor with Large Gas Chemistries

November 27th, 2017 icp-plasma-simulation-vizglow

Plasma processing reactors are used to accomplish a variety of unit steps in a semiconductor integrated circuit manufacture. In most cases, complex feed gas mixtures are used in a plasma reactor to realize precise etch, deposition, doping, cleaning and other types of processes.  The VizGlow Plasma Modeling Software Package provide capability for modeling plasma reactors with complex reactive plasma chemistries in the gas phase and at reactive surfaces.  This technical note discusses the simulation of […]